Part number:
MG1200V1US51
Manufacturer:
File Size:
96.22 KB
Description:
Toshiba gtr module silicon n−channel igbt.
MG1200V1US51_ToshibaSemiconductor.pdf
Datasheet Details
MG1200V1US51 Features
* l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal: M4/
MG1200V1US51_ToshibaSemiconductor.pdf
Datasheet Details
MG1200V1US51
96.22 KB
Toshiba gtr module silicon n−channel igbt.
MG1200V1US51 Distributor
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