MG1200V1US51 Datasheet, Igbt, Toshiba

MG1200V1US51 Features

• Igbt l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector
• Emitter Voltage Gate

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Part number:

MG1200V1US51

Manufacturer:

Toshiba ↗

File Size:

96.22kb

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📄 Datasheet

Description:

Toshiba gtr module silicon n−channel igbt.

MG1200V1US51 Application

• Applications MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT

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