MG1200V1US51 Datasheet - Toshiba

MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT

MG1200V1US51 Features

* l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector

* Emitter Voltage Gate

* Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal: M4/

MG1200V1US51 Datasheet (96.22 KB)

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Datasheet Details

Part number:

MG1200V1US51

Manufacturer:

Toshiba ↗

File Size:

96.22 KB

Description:

Toshiba gtr module silicon n−channel igbt.

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MG1200V1US51 TOSHIBA GTR MODULE SILICON N ͨ 2 ;CHANNEL IGBT Toshiba

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