MG1200V1US51 Datasheet - Toshiba

MG1200V1US51, TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT

MG1200V1US51 TOSHIBA GTR MODULE SILICON N *CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS .

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MG1200V1US51_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG1200V1US51

Manufacturer:

Toshiba ↗

File Size:

96.22 KB

Description:

TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT

Features

* l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal: M4/

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MG1200V1US51 TOSHIBA GTR MODULE SILICON N ͨ 2 ;CHANNEL IGBT Toshiba

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