MG120V2YS40 Datasheet - Toshiba

MG120V2YS40 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 High Power Switching Applications Motor Control Applications MG120V2YS40 Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 1.5µs (max) (IC = 120A) trr = 0.6µs (max) (IF = 120A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward.

MG120V2YS40 Datasheet (171.10 KB)