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LN1134 High Speed Low Dropout Middle Current Voltage Regulators ■ General Description The LN1134 series are highly precise, low noise, positive volta

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HP8S36 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on

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LN6206 Low Power Low Dropout Middle Current Voltage Regulators ■ General Description The LN6206 series are precise, low power consumption, high volt

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1 Product Family Data Sheet Rev1.0 2021.02.25 Middle Power LED Series 2835 0.5W Room Temp LM281B+ Pro VG rank Designed for better lm/$ (Ambient, Linea

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2SA2071 Middle Power transistor (-60V, -3A) Parameter VCEO IC Value -60V -3A lFeatures 1)High speed switching. 2)Low saturation voltage. 　(Typ.:-20

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2SCR552P5 Middle Power Transistors (30V / 3A) Parameter VCEO IC Value 30V 3A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=400mV(Max.) 　(I

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2SCR542P Midium Power Transistors (30V / 5A) Parameter VCEO IC Value 30V 5A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=400mV(Max.) 　(IC

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HP8K24 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 3.0mΩ ±27A ±80A 22W 31W lFeatures 1) Low on

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NotNeRewcDoemsimgennsded for 2SCR586D NPN 5.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 5A lFeatures 1) Suitable for Middle Power D

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HP8K22 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 4.6mΩ ±27A ±57A 22W 25W lFeatures 1) Low on

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NotNeRewcDoemsimgennsded for 2SCR293P Middle Power Transistors (30V / 1A) Parameter VCEO IC Value 30V 1A lFeatures 1) Suitable for Middle Power Dr

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2SCR512P Middle Power Transistors (30V / 2V) Parameter VCEO IC Value 30V 2A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=400mV(Max.) 　(I

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features:

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Product Family Data Sheet Rev.7.0 2016.7.4 Middle Power LED Series 5630 LM561C 1# LM561C is highest performance and lm/W for fluorescent replacement

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2SCR512P FRA Middle Power Transistor (30V / 2A) Parameter VCEO IC Value 30V 2A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=400mV(Max.)

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2SCR514P FRA Middle Power Transistor (80V / 0.7A) Parameter VCEO IC Value 80V 0.7A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=300mV (M

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2SCR542F3 NPN 3.0A 30V Middle Power Transistor Parameter VCEO IC Value 30V 3A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　VCE(

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