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LN1134 High Speed Low Dropout Middle Current Voltage Regulators ■ General Description The LN1134 series are highly precise, low noise, positive volta

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RQ3E100GN 　　Nch 30V 21A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 11.7mΩ ±21A 15W lFeatures 1) Low on - resistance. 2) High po

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WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small packa

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HP8S36 　　30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on

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UT6K3 　　30V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 42mΩ ±5.5A 2W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package

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RQ5A030AP 　　Pch -12V -3A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 62mΩ ±3.0A 1.0W lFeatures 1) Low on - resistance. 2) High Power small mo

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QS5W2 Middle Power Transistor (50V / 3A) Parameter VCEO IC 　 Tr1 and Tr2 50V 3A 　 lFeatures 1)Low saturation voltage, typically 　 VCE(sat)=350mV (M

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1 Product Family Data Sheet Rev1.0 2021.02.25 Middle Power LED Series 2835 0.5W Room Temp LM281B+ Pro VG rank Designed for better lm/$ (Ambient, Linea

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UNISONIC TECHNOLOGIES CO., LTD UTT9NP03 Preliminary 30V DUAL MIDDLE POWER MOSFET (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UTT9NP03 is a 30V N-

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www.DataSheet4U.com Rev.2.0_00 HIGH RIPPLE-REJECTION LOW DROPOUT MIDDLE OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1132 Series The S-1132 Series is a

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Rev.1.1_00 www.DataSheet4U.com HIGH RIPPLE-REJECTION LOW DROPOUT MIDDLE OUTPUT CURRENT CMOS VOLTAGE REGULATOR S-1135 Series S-1135 Series, develope

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RQ3E120BN 　　Nch 30V 21A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 9.3mΩ ±21A 16W lFeatures 1) Low on - resistance 2) High Power Packa

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RQ3E130BN 　　Nch 30V 13A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 6.0mΩ ±13A 2W lFeatures 1) Low on - resistance. 2) High Power Package (HSM

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RS3E075AT 　　Pch -30V -7.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 23.5mΩ ±7.5A 2.0W lFeatures 1) Low on - resistance. 2) Small Surface M

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2SAR513P5 Middle Power Transistors(-50V / -1A) Parameter VCEO IC Value -50V -1A lFeatures 1)Low saturation voltage,typically 　VCE(sat)=-400mV(Max.)

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NotNeRewcDoemsimgennsded for 2SCR586D NPN 5.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 5A lFeatures 1) Suitable for Middle Power D

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www.DataSheet4U.com 2.5V Drive Nch MOSFET RTR030N05 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 (3) 0.85 0.7 z

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