* 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation
3DG122
Shaanxi Qunli Electric
50.65 KB
Npn silicon high frequency middle power transistor.
www.DataSheet4U.net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG122 NPN Silicon High Frequency Middle Power T.
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