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LN1134 - High Speed Low Dropout Middle Current Voltage Regulators
LN1134 High Speed Low Dropout Middle Current Voltage Regulators ■ General Description The LN1134 series are highly precise, positive voltage LDO reg.HP8S36 - Middle Power MOSFET
HP8S36 30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 2.4mΩ ±27A ±80A 22W 29W lFeatures 1) Low on .HP8K22 - Middle Power MOSFET
HP8K22 30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 4.6mΩ ±27A ±57A 22W 25W lFeatures 1) Low on .3DG12 - NPN Silicon High Frequency Middle Power Transistor
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle Power Transistor Features: 1.2SA2071 - Middle Power transistor
2SA2071 Middle Power transistor (-60V, -3A) Parameter VCEO IC Value -60V -3A lFeatures 1)High speed switching. 2)Low saturation voltage. (Typ.:-20.3DG130 - NPN Silicon High Frequency Middle Power Transistor
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: .LN6206 - Low Power Low Dropout Middle Current Voltage Regulators
LN6206 Low Power Low Dropout Middle Current Voltage Regulators ■ General Description The LN6206 series are precise, low power consumption, high volt.HP8K24 - Middle Power MOSFET
HP8K24 30V Nch+Nch Middle Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 8.8mΩ 3.0mΩ ±27A ±80A 22W 31W lFeatures 1) Low on .2SCR552P5 - Middle Power Transistors
2SCR552P5 Middle Power Transistors (30V / 3A) Parameter VCEO IC Value 30V 3A lFeatures 1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (I.RQ1A070ZP - Pch -12V -7A Middle Power MOSFET
RQ1A070ZP Pch -12V -7A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 12mΩ ±7A 1.5W lFeatures 1) Low on - resistance. 2) Low voltage drive(1.5.LM101A - Middle Power LED
Product Family Data Sheet Rev.2.2 2016.5.24 Middle Power LED Series Flip Chip Package LM101A 1# LM101A opens up a new world of lighting design with .SP8K52FRA - Middle Power MOSFET
SP8K52FRA 100V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 100V 170mΩ ±3.0A 2.0W lFeatures 1) Low on - resistance. 2) Small Surface Moun.2SAR293P5 - Middle Power Transistors
2SAR293P5 Middle Power Transistors (-30V / -1.0A) Parameter VCEO IC Value -30V -1A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary .2SAR340P - Middle Power Transistors
2SAR340P PNP -100mA -400V Middle Power Transistor Parameter VCEO IC Value -400V -100mA lFeatures 1) Complementary NPN Types : 2SCR346P. 2) Low VCE(.2SAR340Q - Middle Power Transistors
2SAR340Q PNP -100mA -400V Middle Power Transistor Parameter VCEO IC Value -400V -100mA lFeatures 1) Complementary NPN Types : 2SCR341Q. 2) Low VCE(.2SAR512P5 - Middle Power Transistors
2SAR512P5 Medium Power Transistors(-30V/-2A) Parameter VCEO IC Value -30V -2A lFeatures 1)Low saturation voltage,typically VCE(sat)=-0.4V(Max.) (.2SAR512R - Middle Power Transistors
2SAR512R PNP -2.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -2A lFeatures 1)Suitable for Middle Power Driver 2)Complementary NPN T.2SAR513P5 - Middle Power Transistors
2SAR513P5 Middle Power Transistors(-50V / -1A) Parameter VCEO IC Value -50V -1A lFeatures 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.).2SAR513R - Middle Power Transistors
2SAR513R PNP -1.0A -50V Middle Power Transistor Parameter VCEO IC Value -50V -1A lFeatures 1)Suitable for Middle Power Driver 2)Complementary NPN T.