Part number:
3DG1008
Manufacturer:
LZG
File Size:
200.99 KB
Description:
Silicon npn transistor.
Datasheet Details
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Figure 1.
Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 41°C/W on a 1-inch2 , 2-oz.
Cu pad on a 0.06inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2% GATE
3DG1008 Features
* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25ºC unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate
Datasheet Details
3DG1008
LZG
200.99 KB
Silicon npn transistor.
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