High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015(3CG1015). /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5.0
V
IC
150
mA
IB
50
mA
PC
400
mW
Tj
150
℃
Tstg
-55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
NF
rbb′
VCB=60V
IE=0
VEB=5.0V
IC=0
VCE=6.0V
IC=2.0mA
VCE=6.0V
IC=150mA
IC=100mA
IB=10mA
IC=100mA.
📁 Related Datasheet
3DG181 - NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor (Qunli Electric)
3DG182 - NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor (Qunli Electric)
3DG100 - NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
3DG101 - Silicon NPN high frequency low power transistor (ETC)
3DG102 - NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
3DG110 - NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG111 - NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG12 - NPN Silicon High Frequency Middle Power Transistor (Shaanxi Qunli Electric)