1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency osc
3DG101, Qunli Electric
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency.
3DG110, Qunli Electric
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency.
3DG111, Qunli Electric
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency.
3DG12, Shaanxi Qunli Electric
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG12
NPN Silicon High Frequency Middle Power Transistor
Features: 1.
