3DG102 Features
* 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation
Datasheet Details
3DG102, 3DG100
Shaanxi Qunli
30.97 KB
Npn silicon high frequency low power transistor.
This datasheet PDF includes multiple part numbers: 3DG102, 3DG100.
Please refer to the document for exact specifications by model.
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