3DG111 Features
* 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation
Datasheet Details
3DG111, 3DG101
Qunli Electric
44.70 KB
Npn silicon high frequency low power transistor.
This datasheet PDF includes multiple part numbers: 3DG111, 3DG101.
Please refer to the document for exact specifications by model.
3DG111 Distributor
📁 Related Datasheet
3DG110 NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG100 NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
CSD18504Q5A SILICON NPN TRANSISTOR (LZG)
3DG101 Silicon NPN high frequency low power transistor (ETC)
3DG101 NPN Silicon High Frequency Low Power Transistor (Qunli Electric)
3DG102 NPN Silicon High Frequency Low Power Transistor (Shaanxi Qunli)
3DG12 NPN Silicon High Frequency Middle Power Transistor (Shaanxi Qunli Electric)
3DG1213 SILICON NPN TRANSISTOR (LZG)
