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3DG182 - NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor

Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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Datasheet Details

Part number 3DG182
Manufacturer Qunli Electric
File Size 33.00 KB
Description NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor
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3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: (Ta = 25°C ) Parameter name Specifications Symbols Unit ABCDE FGH I J Test Condition Total Dissipation Ptot mW 700 Ta=25°C Max.
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