3DG102 - NPN Silicon High Frequency Low Power Transistor

Download the 3DG102 datasheet PDF. This datasheet also covers the 3DG100 variant, as both devices belong to the same npn silicon high frequency low power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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3DG102 npn silicon high frequency low power transistor by Shaanxi Qunli - Datasheet Preview — Note: The manufacturer provides a single datasheet file (3DG100-ShaanxiQunli.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	3DG102
Manufacturer	Shaanxi Qunli
File Size	30.97 KB
Description	NPN Silicon High Frequency Low Power Transistor
Datasheet	3DG102 Datasheet

📁 Similar Datasheet

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Other Datasheets by Shaanxi Qunli

Part Number	Description
3DG100	NPN Silicon High Frequency Low Power Transistor
3DG130	NPN Silicon High Frequency Middle Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG100, 3DG102 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications Parameter name Total Dissipation Max.