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3DG101 - NPN Silicon High Frequency Low Power Transistor

Key Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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Datasheet Details

Part number 3DG101
Manufacturer Qunli Electric
File Size 44.70 KB
Description NPN Silicon High Frequency Low Power Transistor
Datasheet download datasheet 3DG101 Datasheet

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3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications (Ta = 25°C ) Parameter name Symbols Unit 3DG101 3DG110 3DG111 C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-Base Breakdown Voltage V(BR)EBO V Total Dissipation Ptot mW Max. Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C ABC 20 30 40 15 20 30 ≥4 (IE=0.