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3DG1213 - SILICON NPN TRANSISTOR

Key Features

  • Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A 35 50 V 35 50 V 4.0 V IC 500 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A ICBO hFE(1) hFE(2) VCE(sat) VBE IC=10μA IC=1.0mA IE=10μA VCB=20V VCE=3.0V VCE=3.0V IC=150mA VCE=3.0V IE=0 IB=0 IC=0 IE=0 IC=10mA IC=5.

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Datasheet Details

Part number 3DG1213
Manufacturer LZG
File Size 216.87 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG1213 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A)。 Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A 35 50 V 35 50 V 4.0 V IC 500 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO 2SC1213 2SC1213A 2SC1213 2SC1213A ICBO hFE(1) hFE(2) VCE(sat) VBE IC=10μA IC=1.0mA IE=10μA VCB=20V VCE=3.0V VCE=3.0V IC=150mA VCE=3.0V IE=0 IB=0 IC=0 IE=0 IC=10mA IC=500mA IB=15mA IC=10mA Min 35 50 35 50 4.0 60 10 Rating Typ 0.2 0.64 Max 0.5 320 0.