MJ11013 Datasheet | Specifications & PDF Download

MJ11013 DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain-

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