MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.
MJ11014 - DARLINGTON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.MJ11014 - NPN Transistor
MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES .MJ11014 - NPN Transistor
isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·High DC Current Gain- :.MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.