MJ11014 Datasheet | Specifications & PDF Download

MJ11014 30 AMPERE DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

NPN Transistor

isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·High DC Current Gain- :

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30 AMPERE DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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NPN Transistor

MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES

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DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ

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