MJ15016 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = -4A,VCE= -4V ·Collector-Emitter Satur

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Complementary Silicon High-Power Transistors 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) These PowerBase complementary transistors are designed fo

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MJ15015 (NPN) & MJ15016 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Descri

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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed fo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t

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