MJ3000 Datasheet | Specifications & PDF Download

MJ3000 10 AMPERE DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

Complementary Silicon Power Darlington Transistors

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NPN Transistor

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = 5A ·Col

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10 AMPERE DARLINGTON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Silicon

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Bipolar NPN Device

www.DataSheet4U.com MJ3000 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.1

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Silicon complementary trasistors

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(MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS

PNP MJ3000 – MJ3001 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington

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Silicon NPN Power Transistors

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ3000/3001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current g

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NPN Transistor

MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TR

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