MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGT.
Inchange Semiconductor
MJ4032 - Silicon PNP Darlingtion Power Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·With TO-3 package ·Respectively complemen.
Comset Semiconductors
MJ4030 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlin.
Comset Semiconductors
MJ4032 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlin.
Central Semiconductor
MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032,.
ST Microelectronics
MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC.
Comset Semiconductors
MJ4031 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlin.
Seme LAB
MJ4032 - Bipolar NPN Device
MJ4032 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetica.
