MJB3055 (INCHANGE)
NPN Transistor
isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-10
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isc Silicon NPN Power Transistor MJB3055 DESCRIP.
NPN Transistor
MJB3055 Distributor
