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MJB3055 Datasheet - INCHANGE

MJB3055 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) *High DC Current Gain- : hFE= 20-100@IC= 4A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in general-purpose amplifier and switching applications. ABSOLUT.

MJB3055-INCHANGE.pdf

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Datasheet Details

Part number:

MJB3055

Manufacturer:

INCHANGE

File Size:

210.07 KB

Description:

Npn transistor.

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MJB3055 MJB3055 NPN Transistor INCHANGE