MJB13007 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage: VCE(sat) = 2. Swit.

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Datasheet Specifications

Part number: MJB13007
Manufacturer: INCHANGE
File Size: 213.72 KB
Datasheet: MJB13007-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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MJB13007 NPN Transistor INCHANGE

INCHANGE MJB13007-like datasheet