MJB2955 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min). High DC Current Gain- : hFE= 20-100@IC= -4A. 100% avalanche tested. Mini.

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Datasheet Specifications

Part number: MJB2955
Manufacturer: INCHANGE
File Size: 183.24 KB
Datasheet: MJB2955-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A

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MJB2955 PNP Transistor INCHANGE

INCHANGE MJB2955-like datasheet