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MJD200 - Complementary Plastic Power Transistors
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MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed fo
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Motorola
MJD200 - SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD200/D
Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mou
Rating:
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(4 votes)
Fairchild
MJD200 - D-PAK
MJD200
MJD200
D-PAK for Surface Mount Applications
• • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applicat
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INCHANGE
MJD200 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@
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