
MJE18004G - NPN Transistor
isc Silicon NPN Power Transistor
MJE18004G
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa
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isc Silicon NPN Power Transistor MJE18004G DESCR.
MJE18004G Distributor