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MJE18004G - NPN Transistor

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Part number MJE18004G
Manufacturer INCHANGE
File Size 197.53 KB
Description NPN Transistor
Datasheet download datasheet MJE18004G Datasheet
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Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) High Switching Speed G:Pb-Free Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 220V line-operated switch mode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter

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