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MJE18004G - NPN Transistor

MJE18004G Description

isc Silicon NPN Power Transistor MJE18004G .
Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min). High Switching Speed. G:Pb-Free Package. 100% avalanche tested. Minimum.

MJE18004G Applications

* Designed for use in 220V line-operated switch mode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Curre

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Datasheet Details

Part number
MJE18004G
Manufacturer
INCHANGE
File Size
197.53 KB
Datasheet
MJE18004G-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE18004G-like datasheet