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MJE18006 - NPN Transistor

MJE18006 Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performan.

MJE18006 Applications

* Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Curren

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Datasheet Details

Part number
MJE18006
Manufacturer
INCHANGE
File Size
212.33 KB
Datasheet
MJE18006-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE18006-like datasheet