* Low Base Drive Requirement
* High Peak DC Current Gain (55 Typical) @ IC = 100 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling Diode
* Fully Charac
MJE18004D2 Datasheet (466.58 KB)
MJE18004D2
Motorola
466.58 KB
Power transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18004D2/D
MJE18004D2
Designer's
™ Data Sheet
High Speed, High Gain Bipolar NPN Po.
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