Part number:
MJE18004D2
Manufacturer:
Motorola
File Size:
466.58 KB
Description:
Power transistors.
Datasheet Details
Part number:
MJE18004D2
Manufacturer:
Motorola
File Size:
466.58 KB
Description:
Power transistors.
MJE18004D2, POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state of art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore,
MJE18004D2 Features
* Low Base Drive Requirement
* High Peak DC Current Gain (55 Typical) @ IC = 100 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling Diode
* Fully Charac
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