MJE18004D2 Datasheet (Motorola)

MJE18004D2, POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state of art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications.

Therefore,

MJE18004D2 Features

* Low Base Drive Requirement

* High Peak DC Current Gain (55 Typical) @ IC = 100 mA

* Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

* Integrated Collector

* Emitter Free Wheeling Diode

* Fully Charac