* Low Base Drive Requirement
* High DC Current Gain (30 Typical) @ IC = 400 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling
MJE18604 Datasheet (217.25 KB)
MJE18604
Motorola
217.25 KB
Power transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE18604D2/D
MJE18604D2
Advance Information
High Speed, High Gain Bipolar NPN Power T.
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