MJE18604 Datasheet (Motorola) - POWER TRANSISTORS

MJE18604, POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state of art High Speed High gain BIPolar transistor (H2BIP).

Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applicati

MJE18604 Features

* Low Base Drive Requirement

* High DC Current Gain (30 Typical) @ IC = 400 mA

* Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread

* Integrated Collector

* Emitter Free Wheeling