Datasheet4U Logo Datasheet4U.com

MJE18604 POWER TRANSISTORS

📥 Download Datasheet  Datasheet Preview Page 1

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power T.

📥 Download Datasheet

Preview of MJE18604 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
MJE18604
Manufacturer
Motorola
File Size
217.25 KB
Datasheet
MJE18604_MotorolaInc.pdf
Description
POWER TRANSISTORS

Features

* Low Base Drive Requirement
* High DC Current Gain (30 Typical) @ IC = 400 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling

Applications

* The MJE18604D2 is state
* of
* art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window. Ma

MJE18604 Distributors

📁 Related Datasheet

📌 All Tags

Motorola MJE18604-like datasheet