MJE18604 Datasheet - Motorola

MJE18604 POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state of art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applicati.

MJE18604 Features

* Low Base Drive Requirement

* High DC Current Gain (30 Typical) @ IC = 400 mA

* Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread

* Integrated Collector

* Emitter Free Wheeling

MJE18604 Datasheet (217.25 KB)

MJE18604 Datasheet Preview — Preview of MJE18604 PDF

Datasheet Details

Part number:

MJE18604

Manufacturer:

Motorola

File Size:

217.25 KB

Description:

Power transistors.

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