MJE18604D2 - POWER TRANSISTORS

Motorola

Datasheet Details

Low Base Drive Requirement.
High DC Current Gain (30 Typical) @ IC = 400 mA.
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread.
Integrated Collector.
Emitter Free Wheeling Diode Matched with the Power Transistor.
Fully Characterized and Guaranteed Dynamic VCE(sat).
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

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Published: May 7, 2005 |