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MJE18604D2 POWER TRANSISTORS

MJE18604D2 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power T.

MJE18604D2 Features

* Low Base Drive Requirement
* High DC Current Gain (30 Typical) @ IC = 400 mA
* Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
* Integrated Collector
* Emitter Free Wheeling

MJE18604D2 Applications

* The MJE18604D2 is state
* of
* art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window. Ma

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Datasheet Details

Part number
MJE18604D2
Manufacturer
Motorola
File Size
217.25 KB
Datasheet
MJE18604D2_MotorolaInc.pdf
Description
POWER TRANSISTORS

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POWER TRANSISTORS Motorola
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