MJE18002D2 Datasheet - Motorola

MJE18002D2 POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP , to design the state of art transistor dedicated to the Electronic Light Ballast and PFC circuit. The main advantages brought by these new transistors are: .

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