Datasheet4U Logo Datasheet4U.com

MJE1100 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – MJE1100

Datasheet Details

Part number MJE1100
Manufacturer INCHANGE
File Size 212.62 KB
Description NPN Transistor
Datasheet download datasheet MJE1100 Datasheet
Additional preview pages of the MJE1100 datasheet.

Product details

Description

High DC Current Gain-hFE= 750(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and output stages in complementary audio amplifier and general-purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5

📁 Similar Datasheet

  • MJE1102 - (MJE110x) TRANSISTOR (Freescale Semiconductor)
  • MJE110x - (MJE110x) TRANSISTOR (Freescale Semiconductor)
  • MJE1123 - Bipolar Power PNP Transistor (Motorola)
  • MJE105 - 5 Ampere Power Transistor (Motorola)
  • MJE105K - 5 Ampere Power Transistor (ETC)
  • MJE12007 - SILICON POWER TRANSISTOR (SavantIC)
  • MJE122 - Complementary Silicon Power Transistors (ON)
  • MJE127 - Complementary Silicon Power Transistors (ON)
Other Datasheets by INCHANGE
Published: |