MJE1100 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor MJE1100 .
High DC Current Gain-hFE= 750(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min). Minimum Lot-to-Lot variations f.

📥 Download Datasheet

MJE1100 Datasheet Preview — Preview of MJE1100 PDF

Datasheet Specifications

Part number: MJE1100
Manufacturer: INCHANGE
File Size: 212.62 KB
Datasheet: MJE1100-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for driver and output stages in complementary audio amplifier and general-purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collect

MJE1100 Distributors

📁 Related Datasheet

MJE1102 MJE110x MJE1123 MJE105 MJE105K MJE12007

📌 All Tags

MJE1100 NPN Transistor INCHANGE

INCHANGE MJE1100-like datasheet