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MJE1100 - NPN Transistor

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Description

High DC Current Gain-hFE= 750(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and output stages in complementary audio amplifier and gene

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Part number MJE1100
Manufacturer INCHANGE
File Size 212.62 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor MJE1100 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and output stages in complementary audio amplifier and general-purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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