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MJE1100 - NPN Transistor

MJE1100 Description

isc Silicon NPN Darlington Power Transistor MJE1100 .
High DC Current Gain-hFE= 750(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min). Minimum Lot-to-Lot variations f.

MJE1100 Applications

* Designed for driver and output stages in complementary audio amplifier and general-purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collect

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Datasheet Details

Part number
MJE1100
Manufacturer
INCHANGE
File Size
212.62 KB
Datasheet
MJE1100-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE1100-like datasheet