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MJE13009F NPN Transistor

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Description

isc Silicon NPN Power Transistor MJE13009F .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage : VCE(sat) = 1. Mi.

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Datasheet Specifications

Part number
MJE13009F
Manufacturer
INCHANGE
File Size
211.63 KB
Datasheet
MJE13009F-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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