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MJE13009 - 12 AMPERE NPN SILICON POWER TRANSISTOR

Key Features

  • VCEO(sus) 400 V and 300 V.
  • Reverse Bias SOA with Inductive Loads @ TC = 100_C.
  • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ).
  • 700 V Blocking Capability.
  • SOA and Switching.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13009/D MJE13009* Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information.