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MJE1320 - POWER TRANSISTOR

Key Features

  • High VCEV Capability (1800 Volts).
  • Low Saturation Voltage.
  • 100_C Performance Specified for: Reverse.
  • Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1320/D MJE1320 Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated switchmode applications.