MJE1320 Overview
Description
With TO-220 package - High voltage - Low collector saturation voltage APPLICATIONS - For high-voltage ,power switching in inductive circuits and line operated switchmode applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1800 900 9 2 5 1.5 2.5 80 32 -65~150 -65~150 UNIT V V V A A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0. IC=1A ;IB=0.5A TC=100 IC=2A ;IB=1A IC=1A ;IB=0.5A TC=100 IC=2A ;IB=1A VCEV=RatedValue;VBE(off)=1.5V TC=100 VEB=9V; IC=0 IC=2A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz 2.5 3 MIN 900 MJE1320 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2 COB TYP.
