Inchange Semiconductor MJE1320
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJE1320 |
|---|---|
| Datasheet | MJE1320 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 packaging●Fast switching speed
●Reliable performance at higher powers
●Accurate reproduction of Input signal
●Greater dynamic range
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching regulators●High frequency inverters
●General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PD Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE1320 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=0.1mA; IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=50mA; RBE=∞ BVEBO Emitter-Base Bre...