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MJE1320 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·With TO-220 packaging ·Fast switching speed ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PD Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE1320 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=0.1mA;

IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=50mA;

RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC=1A;

MJE1320 Distributor