Datasheet4U Logo Datasheet4U.com

MJE1320 - NPN Transistor

General Description

With TO-220 packaging Fast switching speed Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators H

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJE1320 POWER TRANSISTOR Motorola
MJE1320 POWER TRANSISTOR ON
MJE1320 SILICON POWER TRANSISTOR SavantIC
MJE13001 NPN Epitaxial Silicon Transistor Unisonic Technologies
MJE13001 NPN Silicon Plastic-Encapsulate Transistor MCC

Other Datasheets by Inchange Semiconductor

Part Number Description
MJE13005D TO-252 NPN Transistor
MJE13009F NPN Transistor
MJE13070 Silicon NPN Power Transistors
MJE13071 Silicon NPN Power Transistors
MJE1100 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-220 packaging ·Fast switching speed ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PD Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE1320 isc website：www.iscsemi.