MJE1320 Datasheet and Specifications PDF

The MJE1320 is a POWER TRANSISTOR.

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Part NumberMJE1320 Datasheet
Manufactureronsemi
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1320/D MJE1320 Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switchi.
* High VCEV Capability (1800 Volts)
* Low Saturation Voltage
* 100_C Performance Specified for: Reverse
*Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS ™ Data Sheet POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS ÎÎÎÎÎÎÎÎÎÎÎ.
Part NumberMJE1320 Datasheet
DescriptionPOWER TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1320/D MJE1320 Designer's NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switchi.
* High VCEV Capability (1800 Volts)
* Low Saturation Voltage
* 100_C Performance Specified for: Reverse
*Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS ™ Data Sheet POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS ÎÎÎÎÎÎÎÎÎÎÎ.
Part NumberMJE1320 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220 package ·High voltage ·Low collector saturation voltage APPLICATIONS ·For high-voltage ,power switching in inductive circuits and line operated switchmode applications PINNING PIN 1 2 3 B. rwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector outoput.
Part NumberMJE1320 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-220 packaging ·Fast switching speed ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device perfo. C=0.1mA; IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=50mA; RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC=1A; IB=0.5A VCE(sat) -2 Collector-Emitter Saturation Voltage IC=2A; IB=1A VBE(sat)-1 Base-Emitter Saturation Voltage IC.