MJE13009-K
UTC
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Switchmode series npn silicon power transistors. The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are part
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MJE13009-Q - NPN SILICON TRANSISTOR
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.
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Order this document by MJE13009/D
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The M.
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® MJE13009
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s STMicroelectronics PREFERRED SALESTYPE
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(UTC)
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DESCRIPTION
The MJE13009 is desig.
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(TGS)
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(Inchange Semiconductor)
Inchange Semiconductor
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DESCRIPTION ¡¤With TO-220C package ¡¤High voltage ,high speed APPLICATION.
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(KEC)
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TECHNICAL DATA
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Exc.
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(ON Semiconductor)
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Preferred Device
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The MJE13009 is designed for high−voltage, high−speed power switching indu.
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w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13008 and MJE13009 are silic.
MJE13009 - NPN Power Transistor
(TAITRON)
NPN Power Transistor MJE13009
NPN Power Transistor
Features
The TCI MJE13009 is designed for high–voltage, high–speed power switching inductive cir.