* High Gain Limits Base
* Drive Losses to only 1
* 2% of Circuit Output Current
* Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
* Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.)
MJE1123
Motorola
116.04 KB
Bipolar power pnp transistor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE1123/D
Bipolar Power PNP Low Dropout Regulator Transistor
The MJE1123 is an applica.
📁 Related Datasheet
MJE1100 - Transistor
(Motorola Semiconductor)
..
..
..
..
..
..
..
.
MJE1100 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
MJE1100
DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
:.
MJE1102 - (MJE110x) TRANSISTOR
(Freescale Semiconductor)
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSh.
MJE110x - (MJE110x) TRANSISTOR
(Freescale Semiconductor)
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSh.
MJE105 - 5 Ampere Power Transistor
(Motorola)
Free Datasheet http://../
Free Datasheet http://../
.
MJE105 - 5 Ampere Power Transistor
(ETC)
Free Datasheet http://../
Free Datasheet http://../
Free Datasheet http://../
.
MJE105K - 5 Ampere Power Transistor
(ETC)
Free Datasheet http://../
Free Datasheet http://../
Free Datasheet http://../
.
MJE12007 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package .. ·High voltage ·Low s.
