isc Silicon NPN Power Transistor DESCRIPTION ·Co.
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18006/D ™ Data Sheet SWITCHMODE™ Designer's MJE18006 * MJF18006 * *Motorola Prefer.
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari.