
MJE2801T - NPN Transistor
isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 25-1
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isc Silicon NPN Power Transistor MJE2801T DESCRI.
MJE2801T Distributor