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MJE2801T NPN Transistor

MJE2801T Description

isc Silicon NPN Power Transistor MJE2801T .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). High DC Current Gain- : hFE= 25-100@IC= 3A. Complement to Type MJE2901T.

MJE2801T Applications

* Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Co

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Datasheet Details

Part number
MJE2801T
Manufacturer
INCHANGE
File Size
205.38 KB
Datasheet
MJE2801T-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJE2801T-like datasheet