MJE2801T NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor MJE2801T .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min). High DC Current Gain- : hFE= 25-100@IC= 3A. Complement to Type MJE2901T.

📥 Download Datasheet

MJE2801T Datasheet Preview — Preview of MJE2801T PDF

Datasheet Specifications

Part number: MJE2801T
Manufacturer: INCHANGE
File Size: 205.38 KB
Datasheet: MJE2801T-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Co

MJE2801T Distributors

📁 Related Datasheet

MJE200 MJE200G MJE205 MJE205K MJE210 MJE210G

📌 All Tags

MJE2801T NPN Transistor INCHANGE

INCHANGE MJE2801T-like datasheet