* High DC Current Gain
* Low Collector
* Emitter Saturation Voltage
* High Current
* Gain
* Bandwidth Product
* Annular Construction for Low Leakage
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Symbol R
MJE210G
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Complementary silicon power plastic transistors.
Complementary Silicon Power Plastic Transistors
MJE200G (NPN), MJE210G (PNP)
These devices are designed for low voltage, low
*power, high
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📁 Related Datasheet
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