MJE210G Datasheet - ON Semiconductor

MJE210G Complementary Silicon Power Plastic Transistors

MJE210G Features

* High DC Current Gain

* Low Collector

* Emitter Saturation Voltage

* High Current

* Gain

* Bandwidth Product

* Annular Construction for Low Leakage

* These Devices are Pb

* Free and are RoHS Compliant

* MAXIMUM RATINGS Symbol R

Datasheet Details

MJE210G

208.22 KB

Complementary silicon power plastic transistors.

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