MJE200G
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Complementary silicon power plastic transistors.
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MJE200 - 5 AMPERE POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE200/D
Complementary Silicon Power Plastic Transistors
. . . designed for low voltag.
MJE200 - NPN Epitaxial Silicon Transistor
(Fairchild)
MJE200
MJE200
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to M.
MJE200 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 25V(Min) ·DC Current Gain-
: hFE = 70(Min) @ IC= 50.
MJE200 - COMPLEMENTARY SILICON POWER TRANSISTORS
(Central Semiconductor)
MJE200 NPN MJE210 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE.
MJE200 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
MJE200
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
-,, MJE210 。 L.
MJE200 - Complementary Silicon Power Plastic Transistors
(ON Semiconductor)
MJE200 - NPN, MJE210 - PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are Ădesigned for low voltage, low-power, h.
MJE205 - 5 Ampere Power Transistor
(ETC)
Free Datasheet http://../
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MJE205K - 5 Ampere Power Transistor
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MJE210 - SILICON PNP TRANSISTOR
(ST Microelectronics)
® MJE210
SILICON PNP TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
)The MJE210 is a silicon Epitaxial-Base PNP t.
MJE210 - PNP Epitaxial Silicon Transistor
(Fairchild)
MJE210
MJE210
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to M.