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MJE2901T - PNP Transistor

MJE2901T Description

isc Silicon PNP Power Transistor MJE2901T .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min). High DC Current Gain- : hFE= 25-100@IC= -3A. Complement to Type MJE2801T.

MJE2901T Applications

* Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -4 V IC

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Datasheet Details

Part number
MJE2901T
Manufacturer
INCHANGE
File Size
207.92 KB
Datasheet
MJE2901T-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJE2901T-like datasheet