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MJE2955T PNP Transistor

MJE2955T Description

isc Silicon PNP Power Transistor MJE2955T .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min). High DC Current Gain- : hFE= 20-100@IC= -4A. Complement to Type MJE3055T.

MJE2955T Applications

* Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A

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Datasheet Details

Part number
MJE2955T
Manufacturer
INCHANGE
File Size
208.61 KB
Datasheet
MJE2955T-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJE2955T-like datasheet