MJE5742 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor MJE5742H DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 400V(Min) · Low Collector-Emitter Satu

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE5740/D NPN Silicon Power Darlington Transistors The MJE5740, 41, 42 Darlington tran

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NPN Silicon Power Darlington Transistors MJE5740, MJE5742 The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switchin

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