
MJE801T - NPN Transistor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @
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MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN .
MJE801T Distributor