Part MJE801T
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 208.43 KB
Inchange Semiconductor

MJE801T Overview

Description

Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60 V - DC Current Gain- : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A - Complement to Type MJE701T - Minimum Lot-to-Lot variations for robust device performance and reliable operation.