MJE801T datasheet by Inchange Semiconductor.
| Part number | MJE801T |
|---|---|
| Datasheet | MJE801T-INCHANGE.pdf |
| File Size | 208.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector Emitter Breakdown Voltage : V(BR)CEO = 60 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE801T | POWER TRANSISTOR | Central Semiconductor |
 |
MJE801 | NPN Transistor | Fairchild |
 |
MJE801 | (MJE800 - MJE803) SILICON POWER TRANSISTOR | SavantIC |
|
MJE801 | Transistor | Central Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJE801 | NPN Transistor |
| MJE800 | NPN Transistor |
| MJE800T | NPN Transistor |
| MJE802 | NPN Transistor |
| MJE802T | NPN Transistor |
| MJE803 | NPN Transistor |
| MJE803T | NPN Transistor |
| MJE8500 | NPN Transistor |
| MJE8503 | NPN Transistor |
| MJE1100 | NPN Transistor |
