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MJE801T page 2
Page 2

MJE801T Description

·Collector Emitter Breakdown Voltage : V(BR)CEO = 60 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.