Part MJE801
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 208.77 KB
Inchange Semiconductor

MJE801 Overview

Description

Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60 V - DC Current Gain- : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A - Complement to Type MJE701 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.