MJE801
MJE801 is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = 60 V
- DC Current Gain-
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
- plement to Type MJE701
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching...
