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MJE801

Manufacturer: Inchange Semiconductor

MJE801 datasheet by Inchange Semiconductor.

MJE801 datasheet preview

MJE801 Datasheet Details

Part number MJE801
Datasheet MJE801-INCHANGE.pdf
File Size 208.77 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJE801 page 2

MJE801 Overview

·Collector Emitter Breakdown Voltage : V(BR)CEO = 60 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.

MJE801 from other manufacturers

View MJE801 datasheet index

Brand Logo Part Number Description Other Manufacturers
Fairchild Logo MJE801 NPN Transistor Fairchild
SavantIC Logo MJE801 (MJE800 - MJE803) SILICON POWER TRANSISTOR SavantIC
Central Semiconductor Logo MJE801 Transistor Central Semiconductor
Central Semiconductor Logo MJE801T POWER TRANSISTOR Central Semiconductor
Inchange Semiconductor logo - Manufacturer

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